Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells
p.173
p.173
Interaction between Point Defects and Dislocations in SiGe
p.179
p.179
Radiation Induced Defect Levels in Highly Doped n-Type Si1-xGex Strained Layers
p.185
p.185
ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
p.191
p.191
Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
p.197
p.197
X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices
p.203
p.203
Radiation Defects Formation in Si<Ge>
p.209
p.209
Oxygen and Peculiarities of its Precipitation in Si<Ge>
p.215
p.215
The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si1-xGex Interfaces Abruptness
p.221
p.221
Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 69-70)
Pages:
197-202
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Online since:
August 1999
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© 1999 Trans Tech Publications Ltd. All Rights Reserved
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