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Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
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ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
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Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
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X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices
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Radiation Defects Formation in Si<Ge>
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Oxygen and Peculiarities of its Precipitation in Si<Ge>
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The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si_1-xGe_x Interfaces Abruptness
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Vacancy-Gettering in Silicon: Cavities and Helium-Implantation
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Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Radiation Defects Formation in Si<Ge>

Radiation Defects Formation in Si<Ge>

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

209-214

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.209

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Online since:

August 1999

Authors:

Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, Nikolay V. Abrosimov, M. Höhne, W. Schröder

Keywords:

Annealing, Defect, Germanium, Irradiation, Silicon, Solid Solution

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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