Paper Titles

Interaction between Point Defects and Dislocations in SiGe
p.179

Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
p.185

ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
p.191

Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
p.197

X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices
p.203

Radiation Defects Formation in Si<Ge>
p.209

Oxygen and Peculiarities of its Precipitation in Si<Ge>
p.215

The Peculiarities of a Non-Stationary Growth Kinetics in GSMBE and their Influence on Si/ Si_1-xGe_x Interfaces Abruptness
p.221

Vacancy-Gettering in Silicon: Cavities and Helium-Implantation
p.229

HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70X-Ray Diffraction Studies of the Influence of...

X-Ray Diffraction Studies of the Influence of Substitutional Carbon on Si/Ge Interdiffusion in SiGe/Si Superlattices

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

203-208

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.203

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Online since:

August 1999

Authors:

P. Zaumseil, H. Rücker

Keywords:

Double Crystal Diffractomery, SiGe Interdiffusion, Silicon

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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