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Interaction between Point Defects and Dislocations in SiGe
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Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
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ESR Investigations of Modulation-Doped Si/SiGe Quantum Wells
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Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Radiation Induced Defect Levels in Highly Doped...

Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

185-190

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.185

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Online since:

August 1999

Authors:

Edouard V. Monakhov, Andrej Yu. Kuznetsov, H.H. Radamson, Bengt Gunnar Svensson

Keywords:

Deep Level, Defect, DLTS, Heterostructures, Irradiation, Silicon-Germanium (SiGe)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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