Paper Titles

Silicon Materials Engineering for the Next Millennium
p.131

Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
p.143

Equilibrium Critical Thickness of Strained Buried SiGe Layers
p.149

Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
p.155

Defect Control in Nitrogen Doped Czochralski Silicon Crystals
p.161

Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures
p.167

Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells
p.173

Interaction between Point Defects and Dislocations in SiGe
p.179

Radiation Induced Defect Levels in Highly Doped n-Type Si_1-xGe_x Strained Layers
p.185

HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Defect Control in Nitrogen Doped Czochralski...

Defect Control in Nitrogen Doped Czochralski Silicon Crystals

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VIII

Info:

Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

161-166

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.161

Citation:

Cite this paper

Online since:

August 1999

Authors:

Atsushi Ikari, Katsuhiko Nakai, Y. Tachikawa, H. Deai, Y. Hideki, Yasumitsu Ohta, Naoya Masahashi, S. Hayashi, T. Hoshino, Wataru Ohashi

Keywords:

Crystal Originated Particles (COP), Czochralski, Gate-Oxide Integrity, Grown-in Defects, Nitrogen, Oxygen Precipitates, Silicon, TEM

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: