Relaxation of Misfit Induced Strain in Si-Based Heterostructures
p.93
p.93
Materials Quality and Materials Cost - Are they on a Collision Course?
p.103
p.103
Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
p.111
p.111
200 GHz Potential of Si-Based Devices
p.121
p.121
Silicon Materials Engineering for the Next Millennium
p.131
p.131
Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
p.143
p.143
Equilibrium Critical Thickness of Strained Buried SiGe Layers
p.149
p.149
Improved Microwave Absorption Technique for Bulk and Surface Lifetime Analysis in Processed Si Wafers
p.155
p.155
Defect Control in Nitrogen Doped Czochralski Silicon Crystals
p.161
p.161
Silicon Materials Engineering for the Next Millennium
Abstract:
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Periodical:
Solid State Phenomena (Volumes 69-70)
Pages:
131-142
Citation:
Online since:
August 1999
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© 1999 Trans Tech Publications Ltd. All Rights Reserved
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