Paper Titles

Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers
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Grown-in Defects in High Temperature Annealed Si Wafers
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Hydrogen Platelets in Crystalline Silicon - Precursors for the 'Smart Cut'
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Relaxation of Misfit Induced Strain in Si-Based Heterostructures
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Materials Quality and Materials Cost - Are they on a Collision Course?
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Defect Engineering in the Development of Advanced Silicon Crystals and Wafers
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200 GHz Potential of Si-Based Devices
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Silicon Materials Engineering for the Next Millennium
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Electrical Characterization of As-Grown and Thermally Treated 8'' Silicon Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Materials Quality and Materials Cost - Are they on...

Materials Quality and Materials Cost - Are they on a Collision Course?

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

103-110

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.103

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Online since:

August 1999

Authors:

K.V. Ravi

Keywords:

300 mm Silicon, CMOS, Cost, Design Rule, Epitaxy, NTRS, Specification

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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