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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Oxygen Precipitation Behaviour and Internal...

Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

63-72

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.63

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Online since:

August 1999

Authors:

Koji Sueoka, M. Akatsuka, Mitsuharu Yonemura, S. Sadamitsu, Eiichi Asayama, T. Ono, Y. Koike, H. Katahama

Keywords:

Epitaxial Wafers, Internal Gettering, Metal Impurity, Oxygen Precipitation

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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