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Interaction of Crystal Defects with p-n Junctions in Multicrystalline Si Solar Cells
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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Growth and Characteristics of Low Trap Density...

Growth and Characteristics of Low Trap Density Ultrathin [4-7 nm] Gate Oxides for SiGe Quantum Well MOS Structures

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

167-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.167

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Online since:

August 1999

Authors:

S. Kar, P. Zaumseil

Keywords:

Interface States (or Traps), SiGe Quantum Well MOS Structure, Ultra-Thin Gate Oxides

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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