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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Gettering Centres for Metals and Oxygen Formed in...

Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

235-240

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.235

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Online since:

August 1999

Authors:

Reinhard Kögler, A. Peeva, W. Anwand, P. Werner, A.B. Danilin, Wolfgang Skorupa

Keywords:

Defect, Ion Implantation, Metal Gettering, Silicon

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Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

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