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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Gettering at Vacancy and Interstitial-Rich Regions...

Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

247-252

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.247

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Online since:

August 1999

Authors:

K.L. Beaman, J.M. Glasko, Sergei V. Koveshnikov, George A. Rozgonyi

Keywords:

Fe, Gettering, Ion Implantation, MeV, R_p/2, Thermal Stability

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Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

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