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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Impurity Gettering Investigation in the Si-SiO2...

Impurity Gettering Investigation in the Si-SiO₂ System

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

267-272

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.267

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Online since:

August 1999

Authors:

Daniel Kropman, V. Poll, L. Tambek, Tiit Kärner, U. Abru, M. Strik

Keywords:

Defect, ESR, Gettering, Si-SiO₂

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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