Paper Titles

Gettering Centres for Metals and Oxygen Formed in MeV-Ion-Implanted and Annealed Silicon
p.235

Iron Gettering on Cavities Produced by Helium Implantation
p.241

Gettering at Vacancy and Interstitial-Rich Regions in MeV Ion Implanted Silicon
p.247

Laser-Stimulated Gettering Processes in Cd_xHg_1-xTe Solid Solutions
p.253

Gettering Strength Assessment Based on Lifetime Measurements
p.259

Impurity Gettering Investigation in the Si-SiO₂ System
p.267

Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures
p.273

Surface Gettering Background Impurities and Defects in GaAs Plates
p.279

Gettering Processes for the Preparation of Silicon Solar Cell Material
p.285

HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Gettering Strength Assessment Based on Lifetime...

Gettering Strength Assessment Based on Lifetime Measurements

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Gettering and Defect Engineering in Semiconductor Technology VIII

Info:

Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

259-266

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.259

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Online since:

August 1999

Authors:

F.G. Kirscht, B. Orschel, V. Higgs, A. Buczkowski

Keywords:

Bone Mineral Density (BMD), Bulk Defects, Fe, Injection Level Spectroscopy, Internal and External Gettering, Iron, Oi, OPP, Oxygen Precipitation, Photoluminescence (PL), PLM, Polycrystalline Diamond (PCD), Poly-Si

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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