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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Computer Simulation of Gettering Induced Oxygen...

Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

273-278

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.273

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Online since:

August 1999

Authors:

V.G. Litovchenko, A.A. Efremov, Cor Claeys

Keywords:

Buried Oxide, Carbon in Si, Defect Engineering, Gettering of Oxygen, Precipitation, SiO₂, Vacancy

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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