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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70The Segregation Behaviour of Oxygen at...

The Segregation Behaviour of Oxygen at Dislocations in Silicon

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

321-326

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.321

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Online since:

August 1999

Authors:

Semih Senkader, Peter R. Wilshaw, D. Gambaro, Robert J. Falster

Keywords:

Czochralski, Dislocation, Mechanical Strength, Oxygen, Silicon, Warpage

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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