Experimental and Numerical Investigation of the Oxygen Precipitation in Mono- and Multicrystalline Solar Silicon
p.315
p.315
The Segregation Behaviour of Oxygen at Dislocations in Silicon
p.321
p.321
About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range
p.327
p.327
Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra
p.333
p.333
The Spatial Distribution of SiO2 Precipitates Grown in Silicon at Laser Induced Centres
p.339
p.339
Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
p.345
p.345
The Nature of Precursors for the Thermal Donor Formation in Silicon
p.351
p.351
Photoluminescence of Erbium-Doped Silicon: Temperature Dependence
p.359
p.359
Rare Earth Impurities and Impurity-Related Centers in Silicon
p.365
p.365
The Spatial Distribution of SiO2 Precipitates Grown in Silicon at Laser Induced Centres
Abstract:
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Periodical:
Solid State Phenomena (Volumes 69-70)
Pages:
339-344
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Online since:
August 1999
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© 1999 Trans Tech Publications Ltd. All Rights Reserved
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