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About the Electrical Properties of Oxygen Phases Segregated by Annealing Cz Silicon in the 600-800°C Range
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The Spatial Distribution of SiO2 Precipitates Grown in Silicon at Laser Induced Centres
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Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon
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The Nature of Precursors for the Thermal Donor Formation in Silicon
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Photoluminescence of Erbium-Doped Silicon: Temperature Dependence
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Rare Earth Impurities and Impurity-Related Centers in Silicon
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The Nature of Precursors for the Thermal Donor Formation in Silicon

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

351-358

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.351

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Online since:

August 1999

Authors:

V.B. Neimash, O.O. Puzenko, O.M. Kabaldin, A. Kraitchinskii, M. Kras'ko, Cor Claeys, Eddy Simoen

Keywords:

Annealing Parameters, Heat Treatment, Silicon, Thermal Donor

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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