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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Comparative Analysis of Light Emitting Properties...

Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si_1-xGe_x Epitaxial Structures Obtained by MBE Method

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

377-384

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.377

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Online since:

August 1999

Authors:

L.K. Orlov, A.V. Potapov, N.L. Ivina, E.A. Steinman, V.I. Vdovin

Keywords:

Ge/Si_1-xGe_x, Layers, Oxygen Complexes, Photoluminescence (PL), Radiative Recombination Mechanisms, Si:Er, Si_1-xGe_x, Superlattice

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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