Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method

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Periodical:

Solid State Phenomena (Volumes 69-70)

Edited by:

H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Pages:

377-384

DOI:

10.4028/www.scientific.net/SSP.69-70.377

Citation:

L.K. Orlov et al., "Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si1-xGex Epitaxial Structures Obtained by MBE Method", Solid State Phenomena, Vols. 69-70, pp. 377-384, 1999

Online since:

August 1999

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$35.00

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