In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions

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Periodical:

Solid State Phenomena (Volumes 69-70)

Edited by:

H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Pages:

397-402

DOI:

10.4028/www.scientific.net/SSP.69-70.397

Citation:

N. Yarykin et al., "In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions", Solid State Phenomena, Vols. 69-70, pp. 397-402, 1999

Online since:

August 1999

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