Paper Titles

Defect Engineering in Si: Ho Light-Emitting Structure Technology
p.371

Comparative Analysis of Light Emitting Properties of Si: Er and Ge/Si_1-xGe_x Epitaxial Structures Obtained by MBE Method
p.377

Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam
p.385

Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
p.391

In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions
p.397

Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals
p.403

The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon
p.409

Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
p.417

Experimental and Theoretical Study on Interaction Processes for 60° Short Dislocation Segments with Precipitation Centers in Si-Crystals
p.423

HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70In-Situ Photoexcitation-Induced Perturbations of...

In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VIII

Info:

Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

397-402

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.397

Citation:

Cite this paper

Online since:

August 1999

Authors:

Nikolai Yarykin, C.R. Cho, R.A. Zuhr, George A. Rozgonyi

Keywords:

Defect Complexes, DLTS, Ion Implantation, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: