Pre-Cavities Defect Distribution in He Implanted Silicon Studied by Slow Positron Beam
p.385
p.385
Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers
p.391
p.391
In-Situ Photoexcitation-Induced Perturbations of Defect Complex Concentration and Distribution in Silicon Implanted with Light and Heavy Ions
p.397
p.397
Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals
p.403
p.403
The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon
p.409
p.409
Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
p.417
p.417
Experimental and Theoretical Study on Interaction Processes for 60° Short Dislocation Segments with Precipitation Centers in Si-Crystals
p.423
p.423
Ultrasonic Influence on Dislocation Dynamics in Silicon
p.429
p.429
P-N- Junction Peripheral Current Analysis using Gated Diode Measurements
p.437
p.437
The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 69-70)
Pages:
409-416
Citation:
Online since:
August 1999
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Сopyright:
© 1999 Trans Tech Publications Ltd. All Rights Reserved
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