Interaction of Hydrogen with Radiation-Induced Defects in Cz-Si Crystals
p.403
p.403
The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon
p.409
p.409
Temperature Dependence of the Recombination Activity at Contaminated Dislocations in Si: A Model Describing the Different EBIC Contrast Behaviour
p.417
p.417
Experimental and Theoretical Study on Interaction Processes for 60° Short Dislocation Segments with Precipitation Centers in Si-Crystals
p.423
p.423
Ultrasonic Influence on Dislocation Dynamics in Silicon
p.429
p.429
P-N- Junction Peripheral Current Analysis using Gated Diode Measurements
p.437
p.437
Investigations of Extended Defects after Sulfur Diffusion in GaAs
p.443
p.443
On the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates
p.449
p.449
Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon
p.455
p.455
Ultrasonic Influence on Dislocation Dynamics in Silicon
Abstract:
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Periodical:
Solid State Phenomena (Volumes 69-70)
Pages:
429-436
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Online since:
August 1999
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© 1999 Trans Tech Publications Ltd. All Rights Reserved
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