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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Extraction of Vacancy Parameters from Outdiffusion...

Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

455-460

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.455

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Online since:

August 1999

Authors:

P. Pichler

Keywords:

Equilibrium Concentration, Point Defect, Silicon, Vacancy, Zinc

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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