Paper Titles

P-N- Junction Peripheral Current Analysis using Gated Diode Measurements
p.437

Investigations of Extended Defects after Sulfur Diffusion in GaAs
p.443

On the Reduction of the Critical Thickness in In_xGa_1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates
p.449

Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon
p.455

Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements
p.461

Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs
p.467

Variations of Silicon Melt Convection in a Crucible with Boron Addition
p.473

Electrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and Insulators
p.479

Electron Spin Resonance of the P_b Centers Associated with Oxygen Precipitates in Silicon Crystals
p.485

HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Cu Determination in Silicon Wafers: A Comparison...

Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VIII

Info:

Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

461-466

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.461

Citation:

Cite this paper

Online since:

August 1999

Authors:

Vito Raineri, D. Cali, M. Camalleri, M. Di Dio, A. Puglisi

Keywords:

AAS, Copper (Cu), Metal Impurity, Silicon, Surface Photo Voltage (SPV)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: