On the Reduction of the Critical Thickness in InxGa1-xAs Quantum Well Layers Grown on Vicinal GaAs Substrates
p.449
p.449
Extraction of Vacancy Parameters from Outdiffusion of Zinc from Silicon
p.455
p.455
Cu Determination in Silicon Wafers: A Comparison between Electrical and Chemical Measurements
p.461
p.461
Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs
p.467
p.467
Variations of Silicon Melt Convection in a Crucible with Boron Addition
p.473
p.473
Electrical Impedance Spectroscopy (EIS) as a New Characterisation Tool for the Determination of Electrical Material Parameters in Semiconductors and Insulators
p.479
p.479
Electron Spin Resonance of the Pb Centers Associated with Oxygen Precipitates in Silicon Crystals
p.485
p.485
Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique
p.491
p.491
Formation of Spatial Inhomogeneities as a Result of Heat Treatment in Silicon Doped with Zinc
p.497
p.497
Variations of Silicon Melt Convection in a Crucible with Boron Addition
Abstract:
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Periodical:
Solid State Phenomena (Volumes 69-70)
Pages:
473-478
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Online since:
August 1999
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© 1999 Trans Tech Publications Ltd. All Rights Reserved
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