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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Formation of Spatial Inhomogeneities as a Result...

Formation of Spatial Inhomogeneities as a Result of Heat Treatment in Silicon Doped with Zinc

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

497-502

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.497

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Online since:

August 1999

Authors:

Ekaterina V. Astrova, V.B. Voronkov, Alexander A. Lebedev, A.N. Lodygin, A.D. Remenyuk

Keywords:

Annealing, Impurity, Inhomogeneity, Photoconductivity, Silicon, Zinc

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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