Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs

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Periodical:

Solid State Phenomena (Volumes 69-70)

Edited by:

H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Pages:

467-472

DOI:

10.4028/www.scientific.net/SSP.69-70.467

Citation:

E. Simoen et al., "Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs", Solid State Phenomena, Vols. 69-70, pp. 467-472, 1999

Online since:

August 1999

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$35.00

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