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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Single Defect Studies by Means of Random Telegraph...

Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

467-472

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.467

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Online since:

August 1999

Authors:

Eddy Simoen, Cor Claeys, N.B. Lukyanchikova, M.V. Petrichuk, N.P. Garbar

Keywords:

Coulomb Blockade Effect, Field-Oxide Defect, Random Telegraph Signals (RTS), Single Oxide Defect, Submicron Silicon MOSFETs

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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