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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Investigations of Extended Defects after Sulfur...

Investigations of Extended Defects after Sulfur Diffusion in GaAs

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

443-448

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.443

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Online since:

August 1999

Authors:

N. Engler, H.S. Leipner, R.F. Scholz, P. Werner, F. Syrowatka, Jürgen Schreiber, U.M. Gösele

Keywords:

Arsenic Sublattice, Cathodoluminescence, Diffusion, Dislocation, Donor-Vacancy Complexes, Gallium Arsenide, TEM

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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