Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 69-70)

Edited by:

H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Pages:

391-396

DOI:

10.4028/www.scientific.net/SSP.69-70.391

Citation:

D. Panknin et al., "Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers", Solid State Phenomena, Vols. 69-70, pp. 391-396, 1999

Online since:

August 1999

Export:

Price:

$35.00

In order to see related information, you need to Login.