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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Ion Beam Doping of 6H-SiC for High Concentration...

Ion Beam Doping of 6H-SiC for High Concentration p-Type Layers

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

391-396

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.391

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Online since:

August 1999

Authors:

D. Panknin, Wolfgang Skorupa, H. Wirth, M. Voelskow, A. Mücklich, W. Anwand, Gerhard Brauer, A. Pérez-Rodríguez, I. Bakočević, J.M. Morante

Keywords:

Annealing, Defect, Electrical Activation, Ion Implantation, Silicon Carbide (SiC)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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