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HomeSolid State PhenomenaSolid State Phenomena Vols. 69-70Effect of External Stress Applied during Annealing...

Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon

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Gettering and Defect Engineering in Semiconductor Technology VIII

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Periodical:

Solid State Phenomena (Volumes 69-70)

Pages:

345-350

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.69-70.345

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Online since:

August 1999

Authors:

Andrzej Misiuk, H.B. Surma, I.V. Antonova, V.P. Popov, Jadwiga Bak-Misiuk, M. Lopez, A. Romano-Rodríguez, Adam Barcz, J. Jun

Keywords:

Defect, Hydrogen, Hydrostatic Pressure, Implantation, Oxygen, Silicon, Stress

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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