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Intrinsic Point Defects and Grown-in Defects in Silicon
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Point Defect Assisted Diffusion in Semiconductors
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Diffusion and Electrical Properties of 3d Transition-Metal Impurities in Silicon
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Metastable Defects in Compound Semiconductors
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Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors
p.93

Role of Oxygen in Metal Silicide Formation and Properties
p.119

The Effects of Implanted Arsenic on Ti-Silicide Formation
p.147

The Interaction of Hydrogen with Deep Level Defects in Silicon
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Role of Metal Impurity 'Bi' in Amorphous Chalcogenide Semiconductors
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HomeSolid State PhenomenaSolid State Phenomena Vol. 71The Effects of Implanted Arsenic on Ti-Silicide...

The Effects of Implanted Arsenic on Ti-Silicide Formation

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Special Defects in Semiconducting Materials

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Periodical:

Solid State Phenomena (Volume 71)

Pages:

147-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.71.147

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Online since:

October 1999

Authors:

M. Milosavljević, N. Bibić, D. Peruško, C. Jeynes, U. Bangert

Keywords:

Annealing, Arsenic Ion Implantation, Electron Microscopy, Interface, Ion Beam Mixing, Phase Formation, RBS Analysis, Reaction Kinetics, Silicidation, Silicon, Titanium Silicide

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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