Paper Titles

Intrinsic Point Defects and Grown-in Defects in Silicon
p.1

Point Defect Assisted Diffusion in Semiconductors
p.23

Diffusion and Electrical Properties of 3d Transition-Metal Impurities in Silicon
p.51

Metastable Defects in Compound Semiconductors
p.73

Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors
p.93

Role of Oxygen in Metal Silicide Formation and Properties
p.119

The Effects of Implanted Arsenic on Ti-Silicide Formation
p.147

The Interaction of Hydrogen with Deep Level Defects in Silicon
p.173

Role of Metal Impurity 'Bi' in Amorphous Chalcogenide Semiconductors
p.249

HomeSolid State PhenomenaSolid State Phenomena Vol. 71Electronic Structure and Hyperfine Structure of...

Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Special Defects in Semiconducting Materials

Info:

Periodical:

Solid State Phenomena (Volume 71)

Pages:

93-118

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.71.93

Citation:

Cite this paper

Online since:

October 1999

Authors:

Harald Overhof

Keywords:

Contact Interaction, Deep Defects, Deep Donors, Elemental Semiconductors, ENDOR, EPR, Hyperfine Interaction, III-V Compounds, II-VI Compounds, LSDA

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: