Paper Titles

Intrinsic Point Defects and Grown-in Defects in Silicon
p.1

Point Defect Assisted Diffusion in Semiconductors
p.23

Diffusion and Electrical Properties of 3d Transition-Metal Impurities in Silicon
p.51

Metastable Defects in Compound Semiconductors
p.73

Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors
p.93

Role of Oxygen in Metal Silicide Formation and Properties
p.119

The Effects of Implanted Arsenic on Ti-Silicide Formation
p.147

The Interaction of Hydrogen with Deep Level Defects in Silicon
p.173

HomeSolid State PhenomenaSolid State Phenomena Vol. 71Point Defect Assisted Diffusion in Semiconductors

Point Defect Assisted Diffusion in Semiconductors

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Special Defects in Semiconducting Materials

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Periodical:

Solid State Phenomena (Volume 71)

Pages:

23-50

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.71.23

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Online since:

October 1999

Authors:

Jaroslaw Dąbrowski

Keywords:

Boron, Compound Semiconductor, Diffusion, Doping, First-Principle Calculations, Gallium Arsenide, Heterostructures, Implantation, Intermixing, Interstitial, Silicon, Vacancy

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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