Dislocation Generation in Device Fabrication Process

Isabella Mica; Maria Luisa Polignano; G.P. Carnevale; Aldo Armigliato; R. Balboni; M. Brambilla; F. Cazzaniga; Giuseppe Pavia; V. Soncini

doi:10.4028/www.scientific.net/SSP.95-96.439

Paper Titles

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen
p.405

First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces
p.415

Dislocation-Impurity Interaction in Silicon
p.423

Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon
p.433

Dislocation Generation in Device Fabrication Process
p.439

Microstructural and Electrical Properties of NiSi₂ Precipitates at Dislocations in Silicon
p.447

Electrical and Optical Properties of Dislocations Generated under Pure Conditions
p.453

Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
p.459

Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon
p.465

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Dislocation Generation in Device Fabrication Process

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

439-446

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.439

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Online since:

September 2003

Authors:

Isabella Mica, Maria Luisa Polignano, G.P. Carnevale, Aldo Armigliato, R. Balboni, M. Brambilla, F. Cazzaniga, Giuseppe Pavia, V. Soncini

Keywords:

CBED Analysis, Crystal Defects, Implantation Damage, Mechanical Stress

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