Computer Modelling of SiO2 Precipitation in Cz-Si Doped with Nitrogen

A.A. Efremov; V.G. Litovchenko; A.V. Sarikov; Hans Richter; V.D. Akhmetov

doi:10.4028/www.scientific.net/SSP.95-96.405

Paper Titles

High Temperature Electron Irradiation Effects in InGaAs Photodiodes
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Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range
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Radiation Hardening of Silicon for Detectors by Preliminary Irradiation
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Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen
p.405

First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces
p.415

Dislocation-Impurity Interaction in Silicon
p.423

Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon
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Dislocation Generation in Device Fabrication Process
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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Computer Modelling of SiO2 Precipitation in Cz-Si...

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen

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Solid State Phenomena (Volumes 95-96)

Pages:

405-414

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.405

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Online since:

September 2003

Authors:

A.A. Efremov, V.G. Litovchenko, A.V. Sarikov, Hans Richter, V.D. Akhmetov

Keywords:

Computer Modeling, Nitrogen, Oxygen, Precipitate Size Distribution

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DOI: 10.1149/1.1362550

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