Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range

Pavel Hazdra; Volodymyr V. Komarnitskyy

doi:10.4028/www.scientific.net/SSP.95-96.387

Paper Titles

Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon
p.361

A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
p.367

Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers
p.373

High Temperature Electron Irradiation Effects in InGaAs Photodiodes
p.381

Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range
p.387

Radiation Hardening of Silicon for Detectors by Preliminary Irradiation
p.399

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen
p.405

First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces
p.415

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Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

387-392

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.387

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Online since:

September 2003

Authors:

Pavel Hazdra, Volodymyr V. Komarnitskyy

Keywords:

Defect Profiles, Helium, Hydrogen, Irradiation, Silicon

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References

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