Paper Titles

Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers
p.373

High Temperature Electron Irradiation Effects in InGaAs Photodiodes
p.381

Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range
p.387

Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium
p.393

Radiation Hardening of Silicon for Detectors by Preliminary Irradiation
p.399

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen
p.405

First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces
p.415

Dislocation-Impurity Interaction in Silicon
p.423

Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon
p.433

HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Radiation Hardening of Silicon for Detectors by...

Radiation Hardening of Silicon for Detectors by Preliminary Irradiation

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology X

Info:

Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

399-404

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.399

Citation:

Cite this paper

Online since:

September 2003

Authors:

P.G. Litovchenko, D. Bisello, A. Candelori, A.P. Litovchenko, A.A. Groza, A.P. Dolgolenko, V.I. Khivrich, L.I. Barabash, V.F. Lastovetsky, L.A. Polivtsev, W. Wahl, J. Wyss

Keywords:

Charged Particles, Cluster of Defects, Interstitial, Neutron, Radiation Defect, Silicon, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2004 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: