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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Influence of Cobalt Contamination in the...

Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

373-380

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.373

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Online since:

September 2003

Authors:

Nicolas Pic, Adrien Danel, Maria Luisa Polignano, Gianluca Salvà, Massimo Sardo, Stéphane Rey

Keywords:

Cobalt, Contamination, Diffusion Length, DLTS, Surface Photo Voltage (SPV)

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] N. Pic et al., in the Proceedings of High Purity Silicon, The Electrochemical Society Fall meeting, October 2002, PV 2003-03, p.505.

[2] K. Graff, Metal Impurities in Silicon-Device Fabrication, p.36, 2nd edition Springer Verlag, Berlin (1999).

[3] L.D. Yau, C. T. Sah, Appl. Phys. Lett. 21, 157 (1972).

[4] J. Lagowski et. al., Appl. Phys. Lett. 63, 3043 (1993).