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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Two Dimensional Interstitial Diffusion in...

Two Dimensional Interstitial Diffusion in Mesoscopic Structures

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

351-360

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.351

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Online since:

September 2003

Authors:

Filippo Giannazzo, Vito Raineri, S. Mirabella, D. De Salvador, E. Napolitani, F. Priolo

Keywords:

Diffusion, Point Defect, Scanning Capacitance Microscopy

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] F. Giannazzo, F. Priolo, V. Raineri, and V. Privitera, Appl. Phys. Lett. 78, 598 (2001).

[2] P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).

[3] K. Kyllesbech Larsen, V. Privitera, S. Coffa, F. Priolo, S. U. Campisano, and A. Carnera, Phys. Rev. Lett. 76, 1493 (1996).

DOI: 10.1103/physrevlett.76.1493

[4] J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).

[5] S. Mirabella, A. Coati, D. De Salvador, E. Napolitani, A. Mattoni, G. Bisognin, M. Berti, A. Carnera, A. V. Drigo, S. Scalese, S. Pulvirenti, A. Terrasi, and F. Priolo, Phys. Rev. B 65, 045209 (2002).

DOI: 10.1103/physrevb.65.045209

[6] D. Goghero, F. Giannazzo, V. Raineri, Appl. Phys. Lett. 81, 1824 (2002).

[7] F. Giannazzo, F. Priolo,V. Raineri, V. Privitera , A. Picariello, A. Battaglia, S. Moffatt, J. Vac. Sci. Technolog. B 20, 414, (2002).

DOI: 10.1116/1.1424277

[8] H. Yabuhara, M. Ciappa, W. Fichtner, J. Vac. Sci. Technol. B 20, 783 (2002).

[9] F. Giannazzo, L. Calcagno, V. Raineri, L. Ciampolini, M. Ciappa, E. Napolitani, Appl. Phys. Lett., 79, 1211 (2001).

DOI: 10.1063/1.1394956

[10] P. A. Stolk, J. H. -J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997) and reference therein.

DOI: 10.1063/1.364452

[11] N.E.B. Cowern, Appl. Phys. Lett., 64, 2646 (1994).

[12] D.R. Lim, C.S. Rafferty, and F.P. Clemens, Appl. Phys. Lett., 67, 2303, (1995).

[13] H. Bracht, E.E. Haller, and R. Clark-Phelps, Phys. Rev. Lett., 81, 393 (1998).

[14] A. Uraal, P. Griffin, and J. Plummer, Phys. Rev. Lett., 83, 3454, (1999).

[15] Y. Haddara, B. Folmer, M. Law, and T. Buyuklimanli, Appl. Phys. Lett., 77, 1976, (2000).