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Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment
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Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium
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Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures
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Doping Effect of Helium Induced Nanocavities in Silicon
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LACBED Investigations of High Energy Helium Implanted into 4H-SiC
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Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon
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Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
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Two Dimensional Interstitial Diffusion in Mesoscopic Structures
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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Doping Effect of Helium Induced Nanocavities in...

Doping Effect of Helium Induced Nanocavities in Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

325-330

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.325

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Online since:

September 2003

Authors:

Frédéric Cayrel, Laurent Ventura, Daniel Alquier, Fabrice Roqueta, Robert Jérisian

Keywords:

Cavity, DLTS, Helium Implantation, Net Doping, Spreading Resistance

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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