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LACBED Investigations of High Energy Helium Implanted into 4H-SiC
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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Effects of Self-Ion Implantation on the Thermal...

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

337-342

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.337

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Online since:

September 2003

Authors:

C.L. Liu, Daniel Alquier, Frédéric Cayrel, E. Ntsoenzok, M.O. Ruault

Keywords:

EOR Defects, He and Si Ion Implantation, He-Induced Cavities, Interstitial, Silicon

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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