Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon

Wilfried Vervisch; Laurent Ventura; Bernard Pichaud; Gérard Ducreux; Frédéric Lanois; André Lhorte

doi:10.4028/www.scientific.net/SSP.95-96.361

Paper Titles

LACBED Investigations of High Energy Helium Implanted into 4H-SiC
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Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon
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Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
p.343

Two Dimensional Interstitial Diffusion in Mesoscopic Structures
p.351

Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon
p.361

A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
p.367

Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers
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High Temperature Electron Irradiation Effects in InGaAs Photodiodes
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Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range
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Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon

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Solid State Phenomena (Volumes 95-96)

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361-366

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.361

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Online since:

September 2003

Authors:

Wilfried Vervisch, Laurent Ventura, Bernard Pichaud, Gérard Ducreux, Frédéric Lanois, André Lhorte

Keywords:

Complex Formation, Cooling Rate, Diffusion, Platinum, Silicon, Type Conversion

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