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A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

367-372

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.367

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Online since:

September 2003

Authors:

Eddy Simoen, Cor Claeys, V.B. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tischenko, V. Voitovych

Keywords:

Czochralski Silicon, Deep Level Transient Spectroscopy, High-Temperature Irradiation, Oxygen Thermal Donors (OTD's), Radiation Defect, Vacancy Oxygen Complex

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] V.V. Emtsev, Yu.N. Daluda, V.I. Shakhovtsov, V.L. Shyndich, V.B. Neimash, R. S. Antonenko and K. Schmaltz: Sov. Phys. Semicond. Vol. 24 (1990), p.232.

Google Scholar

[2] P. Hazdra, V. Haslar and M. Bartos: Nucl. Instrum. Methods in Phys. Res. B Vol. 55 (1991), p.637.

Google Scholar

[3] N. Keskitalo, A. Hallén, L. Josyula and B.G. Svensson: Nucl. Instrum. Meth. in Phys. Res. B Vol. 127/128 (1997), p.410.

Google Scholar

[4] D.C. Schmidt, B.G. Svensson, J.L. Lindström, S. Godey, E. Ntsoenzok, J.F. Barbot and C. Blanchard: J. Appl. Phys. Vol. 85 (1999), p.3556.

Google Scholar

[5] J.L. Lindström, L.I. Murin, T. Hallberg, V.P. Markevich, B.G. Svensson, M. Kleverman and J. Hermansson: Nucl. Instrum. Meth. in Phys. Res. B Vol. 186 (2002), p.121.

Google Scholar

[6] V. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tischenko, V. Voitovich, E. Simoen and C. Claeys, Proc. High Purity Silicon VII, Eds. C.L. Claeys, P. Rai-Choudhury, M. Watanabe and P. Stallhofer, The Electrochem. Soc. Ser. PV 2002-20 (2002), p.278.

DOI: 10.4028/www.scientific.net/ssp.95-96.367

Google Scholar

[7] J.L. Benton, L.C. Kimerling and M. Stavola: Physica B Vol. 116 (1983), p.271.

Google Scholar

[8] J. -G. Xu, F. Lu and H. -H. Sun: Phys. Rev. B Vol. 38 (1988), p.3395.

Google Scholar

[9] J. Lalita, B.G. Svensson and C. Jagadish: Nucl. Instrum. Meth. in Phys. Res. B Vol. 96 (1995), p.210.

Google Scholar

[10] E. Simoen et al.: submitted to Appl. Phys. Lett.

Google Scholar

[11] Y. -H. Lee and J.W. Corbett: Phys. Rev. B Vol. 13 (1976), p.2653.

Google Scholar

[12] M. -A. Trauwaert, J. Vanhellemont, H.E. Maes, A. -M. Van Bavel, G. Langouche and P. Clauws: Appl. Phys. Lett. Vol. 66 (1995), p.3056.

DOI: 10.1063/1.114276

Google Scholar

[13] I. Pintillie, E. Fretwurst, G. Lindström and J. Stahl: Appl. Phys. Lett. Vol. 81 (2002), p.165.

Google Scholar

[14] J. Svensson, B.G. Svensson and J.L. Lindström: Appl. Phys. Lett. Vol. 49 (1986), p.1435.

Google Scholar

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