Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium

Lyudmila I. Khirunenko; O.A. Kobzar; Yu.V. Pomozov; Mikhail G. Sosnin; N.A. Tripachko; Nikolay V. Abrosimov; H. Riemann

doi:10.4028/www.scientific.net/SSP.95-96.393

Paper Titles

A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
p.367

Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers
p.373

High Temperature Electron Irradiation Effects in InGaAs Photodiodes
p.381

Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range
p.387

Radiation Hardening of Silicon for Detectors by Preliminary Irradiation
p.399

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen
p.405

First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces
p.415

Dislocation-Impurity Interaction in Silicon
p.423

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Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium

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Solid State Phenomena (Volumes 95-96)

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393-398

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.393

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Online since:

September 2003

Authors:

Lyudmila I. Khirunenko, O.A. Kobzar, Yu.V. Pomozov, Mikhail G. Sosnin, N.A. Tripachko, Nikolay V. Abrosimov, H. Riemann

Keywords:

Germanium, Interstitial, Radiation Defect, Silicon, Titanium Nitride TiN

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