Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

393-398

DOI:

10.4028/www.scientific.net/SSP.95-96.393

Citation:

L. I. Khirunenko et al., "Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium", Solid State Phenomena, Vols. 95-96, pp. 393-398, 2004

Online since:

September 2003

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$35.00

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