LACBED Investigations of High Energy Helium Implanted into 4H-SiC

Marie France Beaufort; F. Pailloux; Jean François Barbot

doi:10.4028/www.scientific.net/SSP.95-96.331

Paper Titles

Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment
p.307

Effect of External Stress at Annealing on Microstructure of Silicon Co-Implanted with Hydrogen and Helium
p.313

Defects Created by Multi-Energy He Implantation of Silicon at High Temperatures
p.319

Doping Effect of Helium Induced Nanocavities in Silicon
p.325

LACBED Investigations of High Energy Helium Implanted into 4H-SiC
p.331

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon
p.337

Effect of High Pressure - Temperature on Structure of Silicon Crystals Implanted with Nitrogen / Silicon
p.343

Two Dimensional Interstitial Diffusion in Mesoscopic Structures
p.351

Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon
p.361

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LACBED Investigations of High Energy Helium Implanted into 4H-SiC

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Periodical:

Solid State Phenomena (Volumes 95-96)

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331-336

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.331

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Online since:

September 2003

Authors:

Marie France Beaufort, F. Pailloux, Jean François Barbot

Keywords:

Helium, Ion Implantation, LACBED, MET, Silicon Carbide (SiC)

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References

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