Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices

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Periodical:

Solid State Phenomena (Volumes 95-96)

Edited by:

H. Richter and M. Kittler

Pages:

297-306

DOI:

10.4028/www.scientific.net/SSP.95-96.297

Citation:

F. Cayrel et al., "Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices", Solid State Phenomena, Vols. 95-96, pp. 297-306, 2004

Online since:

September 2003

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$35.00

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