Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices

Abstract:

• Periodical: Solid State Phenomena (Volumes 95-96)
• Pages: 297-306
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.95-96.297
• Online since: September 2003
• Authors: Frédéric Cayrel, Daniel Alquier, Laurent Ventura, M. Leo Vincent, F. Roqueta, Christiane Dubois, Robert Jérisian
• Keywords: Device, Extended Defects, Gettering, Helium Implantation, Silicon

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