Luminescence of Dislocations and Oxide Precipitates in Si

Sergio Pizzini; E. Leoni; Simona Binetti; Maurizio Acciarri; Alessia Le Donne; Bernard Pichaud

doi:10.4028/www.scientific.net/SSP.95-96.273

Paper Titles

Growth of Si_1-x-yGe_xC_y Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene
p.243

Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors
p.249

Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)
p.255

Extended Defects in Silicon: an Old and New Story
p.263

Luminescence of Dislocations and Oxide Precipitates in Si
p.273

Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes
p.283

Luminescence of Silicon Implanted with Phosphorus
p.289

Properties of Cavities Induced by Helium Implantation in Silicon and their Applications to Devices
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Modification of MeV He Implantation-Induced Cavities in Silicon by Hydrogen Plasma Treatment
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Luminescence of Dislocations and Oxide Precipitates in Si

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Solid State Phenomena (Volumes 95-96)

Pages:

273-282

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.273

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Online since:

September 2003

Authors:

Sergio Pizzini, E. Leoni, Simona Binetti, Maurizio Acciarri, Alessia Le Donne, Bernard Pichaud

Keywords:

Dislocation, Luminescence, Oxygen, Plastic Deformation, Silicon

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References

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