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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Impact of Defects on the Leakage Currents of...

Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors

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Periodical:

Solid State Phenomena (Volumes 95-96)

Pages:

249-254

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.249

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Online since:

September 2003

Authors:

D. Wolansky, G.G. Fischer, D. Knoll, D. Bolze, Bernd Tillack, P. Schley, Y. Yamamoto

Keywords:

Crystal Defects, Herojunction Bipolar Transistor (HBT), Leakage Current

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] J. -S. Rieh, B. Jagannathan, H. Chen, et al. IEDM Tech. Dig., (2002), p.771.

[2] B. Heinemann, H. Rücker, R. Barth et al., IEDM Tech. Dig., (2002), p.775.

[3] D. Knoll, K.E. Ehwald, B. Heinemann et al., IEDM Tech. Dig. , (2002), p.783.