Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon

Stephan Riepe; G. Stokkan; T. Kieliba; W. Warta

doi:10.4028/www.scientific.net/SSP.95-96.229

Paper Titles

Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells
p.205

Evaluation of Silicon Sheet Film Growth and Wafer Processing via Structural, Chemical and Electrical Diagnostics
p.211

The Effect of Grain Orientations on the Efficiency of Multicrystalline Solar Cells
p.217

Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells
p.223

Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon
p.229

Influence of High-Temperature Processes on Multicrystalline Silicon
p.235

Growth of Si_1-x-yGe_xC_y Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene
p.243

Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors
p.249

Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)
p.255

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Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon

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Solid State Phenomena (Volumes 95-96)

Pages:

229-234

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.229

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Online since:

September 2003

Authors:

Stephan Riepe, G. Stokkan, T. Kieliba, W. Warta

Keywords:

CDI, Dislocation, Grain Boundary, Minority Carrier Density, Multicrystalline Silicon

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References

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