Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

You Dou Zheng; Ning Jiang; Ping Han; Shu Lin Gu; Shun Ming Zhu; Rou Lian Jiang; Yi Shi; Wan Fang Lu; Bo Shen; Rong Zhang

doi:10.4028/www.scientific.net/SSP.95-96.243

Paper Titles

The Effect of Grain Orientations on the Efficiency of Multicrystalline Solar Cells
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Understanding and Reducing the Boron-Oxygen-Related Performance Degradation in Czochralski Silicon Solar Cells
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Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon
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Influence of High-Temperature Processes on Multicrystalline Silicon
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Growth of Si_1-x-yGe_xC_y Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene
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Impact of Defects on the Leakage Currents of Si/SiGe/Si Heterojunction Bipolar Transistors
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Long-Wavelength SiGe/Si MQW Resonant-Cavity-Enhanced Photodiodes (RCE-PD)
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Extended Defects in Silicon: an Old and New Story
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Luminescence of Dislocations and Oxide Precipitates in Si
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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96Growth of Si1-x-yGexCy Alloy Layers on Si by...

Growth of Si_1-x-yGe_xC_y Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

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Solid State Phenomena (Volumes 95-96)

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243-248

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96.243

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Online since:

September 2003

Authors:

You Dou Zheng, Ning Jiang, Ping Han, Shu Lin Gu, Shun Ming Zhu, Rou Lian Jiang, Yi Shi, Wan Fang Lu, Bo Shen, Rong Zhang

Keywords:

Chemical Vapor Deposition (CVD), Si_1-x-yGe_xC_y Alloy, Substitutional Incorporation

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