Extended Defects in Silicon: an Old and New Story

[1] B.O. Kolbesen and H.P. Strunk, VLSI Electronics: Microstructure Science , Silicon Materials, Huff HR, Volume Ed. 12 (New York: Academic) (1985), p.143

Google Scholar

[2] S.M. Hu, in Semiconductor Silicon 1986, eds. H.R. Huff, T. Abe and B. Kolbesen, (Pennington, N J: The Electrochem. Soc.) (1986), p.722

Google Scholar

[3] P.M. Fahey, S.R. Mader, S.R. Stiffler, R.L. Mohler, J.D. Mis and J.A. Slinkman, IBM J. Res. Develop. 36 (1992), p.158

DOI: 10.1147/rd.362.0158

Google Scholar

[4] J. Vanhellemont and C. Claeys, Proc. 1 st International Rapid Thermal Processing Conference, eds. R.B. Fair and B. Lojek, (1993), p.62

Google Scholar

[5] S.M. Hu, J. Appl. Phys. 40 (1969), p.4413

Google Scholar

[6] S. Hu, S. Klepner, R. Schwenker and D. Seto, J. Appl. Phys. 47 (1976), p.4098

Google Scholar

[7] S.M. Hu, J. Appl. Phys. 70 (1991), p. R53

Google Scholar

[8] J. Vanhellemont, S. Amelinckx and C. Claeys, J. Appl. Phys. 61 (1987), p.2170 and 2176; ibid. 63 (1988), p.5703

Google Scholar

[9] J. Vanhellemont, Ph. D. dissertation, Universiteit Antwerpen, Belgium (1990)

Google Scholar

[10] S.M. Hu, J. Appl. Phys. 66 (1989), p.2741

Google Scholar

[11] S.M. Hu, Appl. Phys. Lett. 31 (1977), p.53

Google Scholar

[12] B. Leroy and C. Plougonven, J. Electrochem. Soc. 127 (1980), p. (1910)

Google Scholar

[13] K. Sumino, H. Harada and I. Yonegawa, Jap. J. Appl. Phys. 19 (1980), p. L49

Google Scholar

[14] J.D. Lawrence and H.L. Tsai, Mater. Res. Soc. Symp. Proc. 59 (1986), p.388

Google Scholar

[15] J. Vanhellemont and C. Claeys, J. Electrochem. Soc. 135 (1988), p.1509

Google Scholar

[16] J. Vanhellemont, Solid State Phenomena Vols. 69-70 (1999), p.111

Google Scholar

[17] M. Reiche and O. Breitenstein, Phys. Stat. Sol. (a) 101 (1987), p. K97

Google Scholar

[18] H. Bender and J. Vanhellemont, Phys. Stat. Sol. (a) 107 (1988), p.455

Google Scholar

[19] A. Parisini and B. Bourret, Phil. Mag. A 67 (1993), p.605

Google Scholar

[20] H. Bender and J. Vanhellemont, in "Handbook on Semiconductors", Volume 3b, Second edition, ed. S. Mahajan, North-Holland, (1994), p.1637

Google Scholar

[21] T.Y. Tan, Phil. Mag. A.44 (1981), p.101

Google Scholar

[22] M. Reiche, J. Reichel and W. Nitzsche, Phys. Stat. Sol. (a) 107 (1988), p.851

Google Scholar

[23] H. Bender, Phys. Stat. Sol. (a) 86 (1984), p.245

Google Scholar

[24] C. Huang and R. Jaccodine, J. Appl. Phys. 66 (1989), p.531

Google Scholar

[25] K. W. Schwartz, J. Appl. Phys. 85, p.108, ibid. 85, p.120 (1999)

Google Scholar

[26] D. Chidambarrao, X.H. Liu and K.W. Schwartz, J. Appl. Phys. 92 (2002), p.6278

Google Scholar

[27] J. Vanhellemont and C. Claeys, J. Appl. Phys. 62 (1987), p.3960, ibid. 71 (1992), p.1073

Google Scholar

[28] S. Senkader, G. Hobler and C. Schmeiser, Appl. Phys. Lett. 69 (1996), p.4008

Google Scholar

[29] J. Vanhellemont, O. De Gryse and P. Clauws, Proc. "High Purity Silicon VII", ECS Fall Meeting 2002, in press.

Google Scholar

[30] J. Vanhellemont, J. Appl. Phys. 78 (1995), p.4297

Google Scholar

[31] O. De Gryse, Ph. D. dissertation, Universiteit Gent, Belgium (2002)

Google Scholar

[32] O. De Gryse, P. Clauws, J. Van Landuyt, O. Lebedev, C. Claeys, E. Simoen and J. Vanhellemont, J. Appl. Phys. 91 (2002), p.2493

DOI: 10.1063/1.1429800

Google Scholar

[33] O. De Gryse, P. Clauws, J. Vanhellemont, O. Lebedev, J. Van Landuyt, E. Simoen and C. Claeys, submitted for publication in Journ. Electrochem. Soc.

DOI: 10.1149/1.1776592

Google Scholar

[34] J. Vanhellemont, J. Esfandyari, G. Obermeier, E. Dornberger, D. Gräf, U. Lambert and G. Kissinger, Electrochemical Society Proceedings Volume 98-13 (1998), p.101

Google Scholar